Part Number Hot Search : 
C1200 G2SB60 01430 GF4435 TZM5260B 2SC2412K IDT7018L MCP3002T
Product Description
Full Text Search
 

To Download HUM3002 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 HUM3002/3003/3004 High Voltage, High Power Pin Diode
PRODUCT PREVIEW/PRELIMINARY
DESCRIPTION
KEY FEATURES Non-magnetic Package For MRI Application. High Power, High Voltage Package (4 kV -40 kW) Stable High Voltage Chip Passivation. High Current Rating. High Surge Current Rating. Low Rs, Low Loss, Low Distortion Design. APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. Band Switching. Industrial Heating.
WWW . Microsemi .C OM
These Microsemi PIN diodes are perfect for high power switching applications where high isolation, low loss, low distortion characteristics, and high power handling capability are critical. These PIN diodes utilize Microsemi's SOGO passivation process for superior stable high voltage operation. The package is a modified DO-4 structure for ease of mount down with excellent thermal properties. No thin internal straps are used for electrical connections. A surge current of 150 amperes at half sine 8.3 ms is easily handled.
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
DO-4 PIN
DIODE
Maximum Ratings @ 25C
(UNLESS OTHERWISE SPECIFIED)
Parameter Reverse Voltage IR = 10A Average Power Dissipation @ Stud =50C RF Power Handling Capability(CW) @Zo = 50 OHms Rs = 0.1 OHM @ Stud =50C Non-Repetitive Sinusoidal Surge Current (8.3 ms) Storage Temperature Range Operating Temperature Range Thermal resistance Junction-to Case
Symbol VR IO
TYPE HUM3002 2,000 50 HUM3003 3,000 50 HUM3004 4,000 50 Unit V W
PRF
40
40
40
kW
IFSM TSTG TOP RJC
150 -55C to +150C -55C to +125 1.5
150 -55C to +150C -55C to +125 1.5
150 -55C to +150C -55C to +125 1.5
A C C C/W
ELECTRICAL CHARACTERISTICS
Parameter
Diode Resistance Capacitance CT Reverse Current Carrier Lifetime Parallel Resistance Forward Voltage
Symbol
RS CT IR RP Vf
Conditions
F= 10 MHz, If = 250 mA F= 1 MHz, 100 V VR @ Rated Voltage If = 10 mA / 100 V F= 1 MHz, 100 V If = 0.5 A
Min
Typ.
0.1 4.3
Max
0.2 5.0 10
Units
pF A s k V
20 5
30 0.75
Microsemi
HUM3002/3003/3004 High Voltage, High Power Pin Diode
PRODUCT PREVIEW/PRELIMINARY
WWW . Microsemi .C OM
MECHANICAL MECHANICAL
Microsemi


▲Up To Search▲   

 
Price & Availability of HUM3002

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X